We study the transport of charge and spin at nanoscales. Research in this area not only enhances the understanding of fundamental physics, but also directly leads to new applications such as nonvolatile magnetic memories and logic units. Our effort is focused on exploring new mechanisms to lower the switching energy of nanomagnets, where the information can be stored/processed by the spin of electrons. We are specialized in new materials, new structures and new device concepts for next generation of spintronic applications. We are also interested in the fabrication of nanostructures, by means of large scale self-assembly or photo/electron-beam lithography, and the subsequent magnetic, biological and/or energy applications.
Honors and Awards:
NSF CAREER Award
Newhouse-Illige, T., Liu, Y., Xu, M., Hickey, D. R., Kundu, A., Almasi, H., Bi, C., Wang, X., Freeland, J. W., Keavney, D. J., Sun, C. J., Xu, Y. H., Rosales, M., Cheng, X. M., Zhang, S., Mkhoyan, K. A. & W. G. Wang, "Voltage controlled interlayer coupling in perpendicular magnetic tunnel junctions", Nature Communications8, 15232 (2017)
H. Almasi, T. Newhouse, M. Xu, Y. H. Xu and W. G. Wang, "Effect of Mo insertion layers on the Magnetoresistance and Perpendicular Magnetic Anisotropy in Ta-CoFeB-MgO Junctions", Appl. Phys. Lett., 109, 032401 (2016)
Chong Bi, Meng Xu, Hamid Almasi, Marcus Rosales and W. G. Wang, "Metal Based Nonvolatile Field-effect Transistors", Advanced Functional Materials, 26, 3490 (2016)
C. Bi, Y. Liu, T. Newhouse-Illige, M. Xu, M. Rosales, J.W. Freeland, O. Mryasov, S. Zhang, S.G.E. te Velthuis, and W. G. Wang, "Reversible control of Co magnetism by voltage induced oxidation", Phys. Rev. Lett., 113, 267202 (2014)
W. G. Wang, M. E. Li, S. Hageman and C. L. Chien, "Electric field assisted switching in magnetic tunnel junctions", Nature Materials11, 64 (2012)