We study the transport of charge and spin at nanoscales. Research in this area not only enhances the understanding of fundamental physics, but also directly leads to new applications such as nonvolatile magnetic memories and logic units. Our effort is focused on exploring new mechanisms to lower the switching energy of nanomagnets, where the information can be stored/processed by the spin of electrons. We are specialized in new materials, new structures and new device concepts for next generation of spintronic applications. We are also interested in the fabrication of nanostructures, by means of large scale self-assembly or photo/electron-beam lithography, and the subsequent magnetic, biological and/or energy applications.
Honors and Awards:
NSF CAREER Award
C. Bi, M. Xu, H. Almasi, M. Rosales and W. G. Wang, "Metal Based Nonvolatile Field-effect Transistors", Advanced Functional Materials, 26, 3490 (2016)
H. Almasi, D. R. Hickey, M. Xu, M. R. Rosales, S. Nahar, J. T. Held, K. A. Mkhoyan, and W. G. Wang, "Enhanced tunneling magnetoresistance and perpendicular magnetic anisotropy in Mo / CoFeB / MgO magnetic tunnel junctions" Appl. Phys. Lett. 106, 182406 (2015)
C. Bi, Y. Liu, T. Newhouse-Illige, M. Xu, M. Rosale, J.W. Freeland, O. Mryasov, S. Zhang, S.G.E. te Velthuis, and W. G. Wang, "Reversible control of Co magnetism by voltage induced oxidation", Phys. Rev. Lett., 113, 267202 (2014)
R. Zhao, T. Boudou, W. G. Wang, C. S. Chen, D. H. Reich, "Decoupling Cell and Matrix Mechanics in Engineered Microtissues Using Magnetically Actuated Microcantilevers," Advanced Materials, 25, 1699 (2013)
W. G. Wang, M. E. Li, S. Hageman and C. L. Chien, " Electric field assisted switching in magnetic tunnel junctions," Nature Materials11, 64 (2012)