Zafer Mutlu, Assistant Professor, Department of Materials Science and Engineering, University of Arizona
When
Where
Abstract: Graphene nanoribbons (GNRs), when synthesized with atomic precision through bottom-up chemical approaches, possess a uniform, tunable band gap owing to their deterministic synthesis. GNRs also feature high theoretical mobility arising from quantum confinement in one dimension, making them promising candidates for transistor channel materials in high-performance logic applications. In this seminar, I will introduce GNRs, explaining the characteristics that make them appealing for transistors, presenting the current status of transistors made with them, and discussing key issues. In the second part, I will provide a brief overview of our recent studies, including how to enhance electrostatic control of GNR channel through the deposition of an ultrathin high-k dielectric layer [1], how small to make transistors with GNRs [2,3], and how to optimize the channel-contact interface [4]. Lastly, I will address the remaining challenges and potential enhancements in materials, processes, device integration, and related areas that could enable GNRs to approach outstanding theoretical predictions and explore future opportunities in the field.
References:
[1] Z. Mutlu et al., Short-Channel Double-Gate FETs with Atomically Precise Graphene Nanoribbons, IEDM, 2021.
[2] Z. Mutlu et al., Bottom-Up Synthesized Graphene Nanoribbon Transistors, EDTM, 2022.
[3] Y. Lin, Z. Mutlu et al., Scaling and Statistics of Bottom-up Synthesized Armchair Graphene Nanoribbon Transistors, Carbon, 2023.
[4] Z. Mutlu et al., Contact Engineering for Graphene Nanoribbon Devices, Applied Physics Reviews, under review.
In-person only, Refreshments at 2:30pm, PAS 218